symbol v ds v gs i dm t j , t stg symbol ty p max 24 40 54 75 r jl 21 30 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -4 -3.1 -20 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage -60 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO4441 v ds (v) = -60v i d = -4 a (v gs = -10v) r ds(on) < 100m ? (v gs = -10v) r ds(on) < 130m ? (v gs = -4.5v) the AO4441 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge. this device is suitable for use as a load switch or in pwm applications. standard product a o4441 is pb-free (meets rohs & sony 259 specifications). AO4441l is a green product ordering option. AO4441 and AO4441l are electrically identical. soic-8 top view g d s g s s s d d d d www.freescale.net.cn 1/4 p-channel enhancement mode field general description effect transistor features
symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -2.1 -3 v i d(on) -20 a 80 100 t j =125c 130 102 130 m ? g fs 10 s v sd -0.77 -1 v i s -4 a c iss 930 1120 pf c oss 85 pf c rss 35 pf r g 7.2 9 ? q g (10v) 16 20 nc q g (4.5v) 810nc q gs 2.5 nc q gd 3.2 nc t d(on) 8ns t r 3.8 ns t d(off) 31.5 ns t f 7.5 ns t rr 27 35 ns q rr 32 nc p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-48v, v gs =0v a gate-body leakage current v ds =0v, v gs =20v m ? v gs =-4.5v, i d =-3a gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-10v, v ds =-5v v ds =-5v, i d =-4a r ds(on) static drain-source on-resistance forward transconductance v gs =-10v, i d =-4a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current output capacitance reverse transfer capacitance gate resistance dynamic parameters input capacitance v gs =0v, v ds =-30v, f=1mhz v gs =0v, v ds =0v, f=1mhz total gate charge (4.5v) gate source charge gate drain charge switching parameters total gate charge (10v) v gs =-10v, v ds =-30v, i d =-4a turn-on delaytime v gs =-10v, v ds =-30v, r l =7.5 ? , r gen =3 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-4a, di/dt=100a/ s body diode reverse recovery charge i f =-4a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any ien application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2/4 AO4441 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics: p-channe l 0 5 10 15 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3.0v -3.5v -4.5v -10v -4.0v -5.0v -6.0v 0 2 4 6 8 10 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 70 80 90 100 110 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-4a v gs =-4.5v i d =-3a 60 80 100 120 140 160 180 200 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-4a 25c 125c i d =-3a www.freescale.net.cn 3/4 AO4441 p-channel enhancement mode field effect transistor
typical electrical and thermal characteristics: p-channe l 0 2 4 6 8 10 01020 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 0 102030405060 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s d c r ds(on) limited t j( m a x ) =150c, t a =25c v ds =-30v i d =-4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4/4 AO4441 p-channel enhancement mode field effect transistor
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